Abstract
Several percent of nitrogen was incorporated only near the top surfaces of thermally grown oxides, by surface fluorination at room temperature followed by an atomic nitrogen treatment at 550°C. The dependences of the nitrogen content and the thickness of the nitrided layer on the process condition were studied by angle-resolved X-ray photoelectron spectroscopy. A model of the nitridation process was also proposed. MOS capacitors with boron-doped polycrystalline silicon gates were fabricated using the nitrided ultrathin oxide. From the capacitance-voltage measurements we confirmed that the nitrided oxide would more effectively prevent boron penetration in comparison with the conventional oxide films. The proposed technique is a unique process for obtaining high-quality ultrathin dielectrics.
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