Suppressed and enhanced shot noise in one dimensional field-effect transistors

Abstract

Landauer---Buttiker shot noise formula only considers the impact of Pauli exclusion principle on noise, but not the impact of Coulomb repulsion among carriers. A theory recently derived by the authors is able to include also the impact of Coulomb repulsion, and provides a computational methodology to obtain noise properties on a more complete physical basis. We review recent results from the application of this methodology with the use of in-house developed computational electronics tools. We show that in a one-dimensional FET, electrostatic repulsion among charge carriers in the channel can be responsible for strongly suppressed or enhanced shot noise with respect to the Poissonian Noise, or to the noise level provided by Landauer---Buttiker formula. This is very relevant for device and circuit design, since current semiconductor technology evolution has brought nanoscale FETs very close to the limit of one-dimensional FETs.