Abstract
The polycrystalline CdZnTe thick films which has high resistivity about 5/spl times/10/sup 9/ /spl Omega/cm are grown by thermal evaporation method. Nevertheless, the leakage currents are too high. To suppress the leakage current of polycrystalline CdZnTe X-ray detectors, blocking layers using Schottky barrier was investigated. Stoichiometric surface of poly-CdZnTe layers was obtained with thermal treatment after chemical etching. The In/poly-CdZnTe Schottky barrier diodes exhibits low leakage current (14 nA/cm/sup 2/) and high barrier height (/spl phi//sub b/=0.798 eV).
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