Abstract
Epitaxial graphene layers are produced with the aid of thermal destruction of the surface of a semi-insulating SiC substrate. Raman spectroscopy and atomic-force microscopy are employed in the study of the film homogeneity. A prototype of the gas sensor based on the films is fabricated. The device is sensitive to the NO2 molecules at a level of 5 ppb (five particles per billion). A possibility of the industrial application of the sensor is discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
