Abstract
Temperature and field dependences of magnetization have been measured for Co-doped ZnO films with different Co content grown by MOCVD on sapphire substrates. Measured field dependences of magnetization show ferromagnetic-like hysteresis loops and paramagnetic contribution. Coercive field decreases with an increase of Co content and temperature. The difference between temperature dependences of magnetization measured in zero field cooling and field cooling conditions was observed in the temperature range from 2 K to 300 K indicating superparamagnetic behaviour of the films. The distribution of blocking temperatures extracted from the temperature dependences of magnetization is broad and shifts to the low blocking temperatures with an increase of Co content
Highlights
Due to their specific transport and magnetic properties diluted magnetic semiconductors such as ZnO doped with transition metal ions attract a considerable interest of scientific society
Field dependences of magnetization measured for the film with 1.5 at. % and 6.3 at. % Co is shown in figures 1 and 2
Saturation magnetization at 300 K for the film with 1.5 at. % Co content significantly exceeds the maximum possible saturation magnetization originating from Co2+ ions
Summary
Due to their specific transport and magnetic properties diluted magnetic semiconductors such as ZnO doped with transition metal ions attract a considerable interest of scientific society. In particular ZnO and ZnO:Сo materials reveal weak ferromagnetic-like behavior persisting up to room temperatures [1,2]. This behavior remains the subject of discussion until now due to irregular dependence of magnetic properties on preparation method and on concentration of cobalt [1,2,3,4,5,6,7]. This irregularity points to the significant role of paramagnetic defects in the magnetic properties of undoped and Co-doped ZnO. In this work we present the results of the investigation of magnetic properties of ZnO thin films (180-590 nm) doped with Co (1.5-7.2 at%) grown by MOCVD on crystalline sapphire substrates
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