Supermagnetron plasma CVD of highly effective a-CN x:H electron-transport and hole-blocking films suited to Au/a-CN x:H/p-Si photovoltaic cells

Abstract

Hydrogenated carbon nitride (a-CN x:H) films (0–500 nm) were deposited on p-Si wafers to make Au/a-CN x:H/p-Si photovoltaic cells using i-C 4H 10/N 2 supermagnetron plasma chemical vapor deposition. At a lower electrode RF power (LORF) of 50 W and an upper electrode RF power (UPRF) of 50–800 W, hard a-CN x:H films with optical band gaps of 0.7–1.0 eV were formed. At a film thickness of 25 nm (UPRF of 500 W), the open circuit voltage and short circuit current density were 247 mV and 2.62 mA/cm 2, respectively. The highest energy conversion efficiency was 0.29%. The appearance of the photovoltaic phenomenon was found to be due to the electron-transport and hole-blocking effect of thin a-CN x:H film.