Abstract
We report a broadband superluminescence diode using InGaAs/GaAs self-assembled quantum dots structure grown by atomic layer molecular beam epitaxy. This two-section SLD consists of weakly guided-rib-waveguide gain section (4 μm wide) butt-connected to a broad-area photon absorber (50 μm wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces a low ripple spectrum (<0.3 dB) with a spectral bandwidth of 135 nm at a peak wavelength of 1210 nm under continuous wave operation (20 °C) at 105 mA current injection.
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