Abstract
In this review, we discuss the heterointerface properties of AlGaAs-GaAs superlattices. Emphasis is laid on the abruptness, the induced disordering and the impurity trapping of heterointerfaces. Photoluminescence (PL) from single quantum wells clearly reveals the monolayer fluctuation of heterointerfaces. A correlation between impurity diffusion and induced disordering is obtained by secondary ion mass spectrometry (SIMS). Impurity trapping effects at heterointerfaces are discussed from PL and SIMS results.
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