Superlattice-enhanced silicon soft X-ray and charged particle detectors with nanosecond time response

Abstract

Silicon detectors are an essential measurement tool for Inertial Confinement Fusion and High-Energy-Density Physics Applications, where temporal response of the order of nanoseconds is essential. Soft X-rays (<1 keV), Ultraviolet light, and low-energy electrons (<10 keV) can provide essential information in diagnosing rapidly changing plasma conditions, but reducing the detector dead layer is essential to improving detector response for these shallowly absorbed particles. This paper details a study of silicon detector surface preparation methods such as ion implant parameters, and the addition of a quantum 2D superlattice, to produce fast detectors that are highly sensitive to shallowly absorbed radiation. Measurements of visible light quantum efficiency, electron responsivity, and pulsed x-ray response indicate that detectors with a 2-layer superlattice enjoy a significant benefit over equivalent detectors using an ion implant at the illuminated surface.