Abstract
The metalorganic molecular beam epitaxial (MOMBE) growth of GaAs and (GaAl)As using triethylgallium (TEG) and triethylaluminum (TEA) has been studied. GaAs/GaAlAs multi quantum well (MQW) heterostructures were fabricated and it was found that the photoluminescence peak energy at room temperature agreed with calculated values. Furthermore, a new technique to grow a nipi superlattice structure was proposed and as a trial growth a n-GaAs/n +-GaAs multilayer was prepared by applying an alternating ionization voltage to hydrogen.
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