Abstract
We have suggested using a superlattice semiconductor instead of a bulk semiconductor as an NEA-photocathode for small emittance and high quantum yield because the mini-band energy width and high joint density of states at the bottom of the conduction band can bring small photoelectron's momentum spread and high quantum yield at excitation energy of the band gap. We developed the test sample of the AlGaAs-GaAs superlattice semiconductor designed by using Klonig-Penny-Bastard model. The obtained quantum yield spectrum from the AlGaAs-GaAs superlattice semiconductor after NEA-surface activation was a step function of excitation photon energy most likely caused by the quantum confinement effect.
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