Abstract
In this study, the amorphous-to-crystalline transitions of superlattice-like (SLL) Zn 15 Sb 85 /Ga 30 Sb 70 thin films were investigated by in situ film resistance measurement. The thermal stability, resistance and band gap of the SLL Zn 15 Sb 85 /Ga 30 Sb 70 thin film perform well. The data retention temperature for 10 years increases from 177°C of [Zn 15 Sb 85 7/Ga 30 Sb 70 3] to 220°C of [Zn 15 Sb 85 2/Ga 30 Sb 70 8]. The X-ray diffraction patterns show the presence of a large amount of Sb phase in the Zn 15 Sb 85 /Ga 30 Sb 70 thin films, which causes a rapid phase transition. The surface morphology is observed by atomic force microscopy, which indicates that the thickness of Ga 30 Sb 70 in the SLL thin films can affect the grain size and inhibit the crystallisation process. For the Zn 15 Sb 85 /Ga 30 Sb 70 thin films, an ultra-short switching time of around 2 ns is achieved. These results indicate that the SLL Zn 15 Sb 85 /Ga 30 Sb 70 thin films have a promised application in phase change memory.
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