Abstract
The GeTe/Sb superlattice-like thin films are systematically investigated for the potential application in phase change memory. Compared with GeTe, GeTe/Sb film has lower crystallization temperature and activation energy. Besides, the internal stress of GeTe/Sb is less than GeTe during the crystallization. The superlattice-like structure is observed by transmission electron microscopy. The polycrystalline phase is confirmed by selected area electron diffraction. The reversible resistance switching can be realized for GeTe/Sb-based phase change memory device with an electric pulse of 8ns width. In addition, GeTe/Sb shows a good endurance of 6.3×106cycles.
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