Superior resistive switching performance in SnO2 nanoparticles embedded TiO2 nanorods-based thin films

Abstract

Resistive random-access memories are ideal candidates for next-generation non-volatile memories due to their simple structure, fast response, and low power consumption. One-dimensional nanostructured memories are of particular importance owing to their electron transport confinement in individual components (such as nanorods/nanowires) that can provide extra control to finely tune the electrical performance for stable and reliable memory operations. In this work, vertically oriented one-dimensional TiO2 nanorods were fabricated via a simple and facile solvothermal technique. Besides, SnO2 nanoparticles were embedded on TiO2 nanorods matrix (to form a nanocomposite) and their resistive switching characteristics were evaluated and compared. Although, both devices expressed good resistive switching behavior. However, the nanocomposite device showed superior switching performance than the control (TiO2 nanorods) one. Moreover, the nanocomposite device demonstrated additional features of multilevel data storage and the prediction of switching probabilities at lower potentials to be applied in neuromorphic computing. The governing resistive switching mechanism was explored, and the role of oxygen vacancies was identified as critical for the switching and charge transport mechanism in the investigated devices.