Superior performance and ultrafast response from CH3NH3PbI3 based UV–visible broadband photodetector using 1D carrier transport layers

Abstract

We have designed and fabricated two perovskite-based photodetectors (PPDs) with 2D and 1D metal oxide carrier transport layers having the structure of ZnO thinfilm (TF)/CH3NH3PbI3/NiO TF (Device1) and ZnO nanowire (NW)/CH3NH3PbI3/NiO NW (Device2). Vertical and porous 1D carrier transport layers were fabricated using the advanced glancing angle deposition (GLAD) technique. The structure with 1D carrier transport layers in Device2 showed an enhanced optical absorption and emission as compared to 2D layered structure in Device1. The Device2 would enhance the responsivity (Rλ) upto 134 times in UV (390 nm) and 1350 times in visible (450 nm) region as compared to Device1. Moreover, the maximum detectivity (D*) values of 3.43 × 1011 Jones and 3.53 × 1011 Jones were observed for Device2 and 0.343 × 1011 and 0.35 × 1010 Jones for Device1 in UV and visible regions respectively. In addition to that, the Device2 also showed an external quantum efficiency (EQE) of 3.2 × 103% and 2.9 × 103% in UV and visible regions respectively. Furthermore, the Device2 showed an ultrafast device response with rise time and fall times of 0.17 s and 0.13 s respectively. The 1D carrier transport layers in PPDs can be used as good candidate for future broadband photodetectors (PDs).