Abstract
The effect of the tensile strain on the electron transport are studied theoretically for ultra-thin SiC Nanowires (NWs) with different diameters. Results show that these NWs exhibit distinctive and non-traditional stress-strain curves, characterized by multistage fluctuations. The tension greatly affects the electron transport. The strongest transmission appears when the wire is stretched to the near-emergence of the monatomic chain in the necking place (especially for thicker SiC NWs) which suppresses the electron transport, essentially originating from localized transmission eigenstates and pathways. This work provides an approach to enhance the electron transport and strong backing in promising applications of nanoelectronics and nano-piezoelectric devices for ultra-thin SiC NWs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
