Abstract
Establishing reliable and efficient antireflection structures is of crucial importance for realizing high-performance optoelectronic devices such as solar cells. In this study, we provide a design guideline for buried Mie resonator arrays, which is composed of silicon nanostructures atop a silicon substrate and buried by a dielectric film, to attain a superior antireflection effect over a broadband spectral range by gaining entirely new discoveries of their antireflection behaviors. We find that the buried Mie resonator arrays mainly play a role as a transparent antireflection structure and their antireflection effect is insensitive to the nanostructure height when higher than 150 nm, which are of prominent significance for photovoltaic applications in the reduction of photoexcited carrier recombination. We further optimally combine the buried Mie resonator arrays with micron-scale textures to maximize the utilization of photons, and thus have successfully achieved an independently certified efficiency of 18.47% for the nanostructured silicon solar cells on a large-size wafer (156 mm × 156 mm).
Highlights
Establishing reliable and efficient antireflection structures is of crucial importance for realizing high-performance optoelectronic devices such as solar cells
We provide a design guideline for buried Mie resonator arrays, which is composed of silicon nanostructures atop a silicon substrate and buried by a dielectric film, to attain a superior antireflection effect over a broadband spectral range by gaining entirely new discoveries of their antireflection behaviors
We find that the buried Mie resonator arrays mainly play a role as a transparent antireflection structure and their antireflection effect is insensitive to the nanostructure height when higher than 150 nm, which are of prominent significance for photovoltaic applications in the reduction of photoexcited carrier recombination
Summary
Establishing reliable and efficient antireflection structures is of crucial importance for realizing high-performance optoelectronic devices such as solar cells. There are mainly two comwww.nature.com/scientificreports peting mechanisms contributing to the antireflection effects in the buried Mie resonator arrays with a specific period: one is the strong forward scattering from Mie resonances, which dominates at the long wavelength; the other is the scattering modulated interference antireflection that dominates at the short wavelength and with the position of the reflectance minimum deviating from the ideal destructive interference condition We manipulate both antireflection effects by mediating the thickness of the dielectric cover layer on the short silicon nanostructures to simultaneously realize an excellent broadband antireflection and a low carrier recombination for photovoltaic applications. We have further combined the dielectric layers with an optimized multi-scale textures (nanostructures are optimally formed on micron-scale pyramids) to minimize the reflectance (the Rave reaches as low as 2.43% over the wavelength from 400 to 1100 nm) and the recombination, and have successfully realized an independently certified conversion efficiency (g) of 18.47% for the nanostructured silicon solar cells on a large-size wafer (156 mm 3 156 mm)
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