Abstract
One-dimensional superconducting transistors have been fabricated with individual InAsnanowires (NWs) using radio-frequency sputter cleaning followed by in situ metaldeposition. Because of the highly transparent contacts formed in between the InAsNWs and the metals, supercurrent, multiple Andreev reflections and Shapirosteps under microwave radiation have been observed. Near pinch-off gate regions,Fabry–Perot interference and a normal conductance quantization with resonant featureshave been observed, which were found to be correlated with a supercurrent flow.
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