Abstract
A novel supercritical cleaning process was proposed for removing contamination in high aspect ratio trenches and microholes of highly integrated semiconductor devices. The supercritical CO2-pulse cleaning with the periodic pressure swing of supercritical fluid between subcritical and supercritical conditions was conducted for removing particles in microholes. The effects of microhole size on particle removal were investigated by means of non-destructive observation of high aspect ratio model structures with an optical microscope and SEM.
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Schedule a callMore From: Proceedings of International Conference on Leading Edge Manufacturing in 21st century : LEM21
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