Supercontinuum generation in bandgap engineered, back‐end CMOS compatible silicon rich nitride waveguides

Abstract

CMOS‐compatible nonlinear optics platforms with negligible nonlinear losses and high nonlinearity are of great merit. Silicon, silicon nitride and Hydex glass have made significant headway in nonlinear optical signal processing, though none of these platforms possesses the highly sought after combination of high nonlinearity and negligible nonlinear losses. In this manuscript, we present a nonlinear optics platform based on silicon‐rich nitride, deposited at a low temperature of 250°C compatible with back‐end CMOS processing. The silicon‐rich nitride is designed and engineered in composition to have a bandgap of 2.05 eV, such that the two‐photon absorption edge is well below 1.55 μm. The designed and developed waveguides have a nonlinear parameter of 550 W−1/m, 500 times larger than that in silicon nitride waveguides, while at the same time not possessing two‐photon and free‐carrier losses. Using 500‐fs pulses, we generate supercontinuum exceeding 0.6 of an octave.