Abstract
This work examines the filling of Through Silicon Vias (TSV) by Ni deposition from a NiSO4 + NiCl2 + H3BO3 electrolyte containing a branched polyethyleneimine suppressor. Feature filling occurs due to the interaction of transport limited suppressor adsorption and its consumption by potential dependent metal deposition. The interaction between surface topography and suppressor transport yields a sharp transition from passive to active deposition within the TSV. The transition is associated with significant incorporation of the suppressor, or its components, within the Ni deposit that results in grain refinement evident by electron backscatter diffraction (EBSD). Potential waveforms that progressively shift the location of the passive-active transition upward to optimize feature filling were examined. The evolution of feature filling and deposit microstructure are compared to predictions of a three-dimensional model that reflect critical behavior associated with suppressor-derived, S-shaped negative differential resistance (S-NDR). The model uses adsorption and consumption kinetics obtained from voltammetric measurements of the critical potential associated with suppression breakdown. Good agreement between experiment and simulation is demonstrated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
