Abstract
Saperconducting Pb films 11 to 200 \AA{} thick have been deposited in ultrahigh vacuum on the clean (111) surface of crystalline silicon. Low-energy-electron diffraction indicated that the Pb preferentially grows with the Pb (111) plane parallel to the substrate surface. Measurements of normal-state film resistivity and of the superconducting transition temperature ${T}_{c}$ were taken in situ. The dependence of ${T}_{c}$ on film thickness was essentially identical to that previously measured for Pb films grown epitaxially on crystalline PbTe. This result is discussed in view of the dissimilarities between the two substrate materials.
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