Abstract

We have prepared the new amorphous superconductor MoxCyGazOδ with a maximum critical temperature Tc of 3.8 K by the direct-write nano-patterning technique of focused (gallium) ion beam induced deposition (FIBID) using Mo(CO)6 as precursor gas. From a detailed analysis of the temperature-dependent resistivity and the upper critical field, we found clear evidence for proximity of the samples to a disorder-induced metal-insulator transition. We observed a strong dependence of Tc on the deposition parameters and identified clear correlations between Tc, the localization tendency visible in the resistance data and the sample composition. By an in-situ feedback-controlled optimization process in the FIB-induced growth, we were able to identify the beam parameters which lead to samples with the largest Tc-value and sharpest transition into the superconducting state.

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