Abstract
High quality superconducting Zr2Rh films have been produced by dc diode sputtering in Ar. Superconducting films were obtained for substrate temperatures of ∼350–650 °C, with the maximum values of TC (11.2 °K) and resistance ratio (∼26) falling in a narrower range ∼550–600 °C. Oxidations were performed without breaking vacuum. The best tunneling characteristics were obtained with 180 Torr sec oxygen exposure and pre- and postoxidation anneals. A ∼10 Å sputtered Zr overlayer yielded additional improvement.
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