Abstract
Niobium nitride (NbN) is widely used in high-frequency superconducting electronics circuits because it has one of the highest superconducting transition temperatures () and largest gap among conventional superconductors. In its thin-film form, the Tc of NbN is very sensitive to growth conditions and it still remains a challenge to grow NbN thin films (below 50 nm) with high Tc. Here, we report on the superconducting properties of NbN thin films grown by high-temperature chemical vapor deposition (HTCVD). Transport measurements reveal significantly lower disorder than previously reported, characterized by a Ioffe–Regel parameter () ∼ 12. Accordingly we observe (point of 50% of normal state resistance), the highest value reported so far for films of thickness 50 nm or less, indicating that HTCVD could be particularly useful for growing high quality NbN thin films.
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