Abstract

We have fabricated refractory superconducting NbNxCy thin films on unheated Si substrates with a low-energy dual ion-beam sputtering technique. Films fabricated with this technique have predominantly B1 crystal structure with maximum Tc ∼13.2 K, resistivity of 80–150 μΩ cm and residual resistance ratio ∼1.0. The use of low ion-beam energies and the absence of substrate heating make this method well suited for producing NbNxCy films for superconducting microelectronic applications.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call