Abstract
With the goal of integrating superconducting iron chalcogenides with future flexible electronics, superconducting FeSe0.1Te0.9 (FST) thin films have been directly deposited on flexible Mica substrates without any buffer layer by a pulsed laser deposition method. Microstructural characterization and X-ray diffraction results show excellent film quality with mostly c -axis growth on Mica substrates. Superconducting properties (such as superconducting transition temperature $T_{c}$ and upper critical field $H_{c2}$ ) have been measured to be comparable to that of the films on single crystal oxide substrates. This paper demonstrates the feasibility of integrating superconducting iron chalcogenide (FST) thin films with future flexible electronics for superconductor-based devices.
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