Abstract

We present some of the anomalous transport features that have recently been observed in boron doped diamond, these include the re-entrant Bosonic Insulating peak, Zero Bias Conductance anomaly and non-linear magnetoresistance. The features, related to confined condensate phase and bound states, are expected to interesting for novel device functionality particularly in low dimensional device elements such as superconducting resonators and phase slip qubits. The fabrication techniques required to produce such device elements are also discussed, including our preferred method of He ion source focused Ion beam (FIB) patterning.

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