Abstract
With a view to the fabrication of superconducting qubits with low decoherence time, we have investigated the influence of a-Si:H deposition by the plasma enhanced chemical vapor deposition method at 250 °C on the superconducting and structural properties of a 20 nm thick Nb film treated by two surface protection methods: plasma nitridation and deposition of a thin unhydrogenated Si layer. A suppression of the Tc and an increase of the residual resistivity are observed due to hydrogen diffusion and decomposition of the native surface oxide, with subsequent oxygen diffusion caused by sample heating. The unhydrogenated Si layer is found to efficiently protect the Nb films against both diffusion processes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
