Abstract
Different rhenium nitrides were prepared by homogeneous implantation of nitrogen ions into rhenium thin films at various temperatures as a function of N concentration. At 9 at % N news x-ray lines appeared in addition to the hcp rhenium phase. The formation of this phase, which could not be identified, was accompanied by a large increases in stress, of the order of 10/sup 11/ dynes/cm/sup 2/. Rhenium nitride with fcc structure was formed between 13 and 50 at %. For ReN a lattice parameter of 4.021 +- 0.002 A, a maximum T/sub c/ value of 4.5--5.0 K, and a resistivity rho/sub R/T of 250 ..mu cap omega..-cm were obtained. Both rhenium nitride phases decomposed above 645 K. An x-ray amorphous phase was obtained after implanation of 40 at % N at LNT. This amorphous phase had a T/sub c/ value of 6.0 K and a rho/sub R/T value of 300 ..mu cap omega..-cm. Transformation into an amorphous Re phase was also observed after implantation of 20 at % P. The maximum T/sub c/ value of this phase was 7 K. This phase decomposed at about 925 K.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
