Abstract
Superabundant vacancies of metal atoms, of concentrations as high as 10 ~ 30 at %, can be formed in the presence of interstitial hydrogen as a consequence of reduction of the formation energy by trapping H atoms. The equilibrium concentration and mobility of Vac-H clusters were determined by in situ XRD and resistivity measurements, and their sources were identified. The binding energies of trapped H atoms were determined by thermal desorption spectroscopy. Some of these experimental results are described, with particular reference to Pd, Ni and Cr.
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