Abstract
The radiation hardness of semiconductor detectors for harsh environments, including nuclear, space, and particle physics, may be enhanced by a number of strategies. We examine the use of materials alternative to silicon, namely silicon carbide and gallium nitride, as well as a nonconventional geometry called 3-D. Fabricated detectors were irradiated to fast hadron fluences of 10/sup 14/ cm/sup -2/ and measurements were made of I--V, C--V and charge collection efficiency before and after irradiation. The performance in each case was found to degrade only slightly, promising highly radiation tolerant operation.
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