Abstract
We propose a novel super-lattice AlAs/AlInAs lateral-oxide current confinement structure for InP-based semiconductor lasers, including surface emitting lasers and opto-electronic devices. We also demonstrate an oxide current confined AlGaInAs/InP multi-quantum well edge emitting laser at 1.55 μm. The lasers can be fabricated by a single step MOCVD growth followed by a lateral oxidation. A tensile-strained AlAs layer on InP substrate has a large hetero-barrier and works as an electron stopping layer in p-type region. The optimized super-lattice AlAs/AlInAs layer exhibited no defects in spite of thick AlAs layer growth beyond critical thickness. In the super-lattice, AlAs layers are carbon-δ-doped for low turn-on voltage, between which narrow gap AlGaInAs layers are inserted for reducing resistance. Broad area lasers with the super-lattice structure exhibited a threshold current density of 130 A/cm 2 per well and characteristic temperature of 85 K.
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