Abstract
We succeeded in growing a high-quality single crystal of URu 2 Si 2 by the Czochralski pulling method and applying the solid state electro-transport method under ultrahigh vacuum. The sample quality strongly depends on the position in the ingot. For some parts of this ingot, the electrical resistivity, specific heat and de Haas–van Alplhen effect were measured. The electrical resistivity of the surface sample clearly indicates a T -linear temperature dependence below 5 K. The mean free path in this sample was determined by the de Haas–van Alphen effect to be 11000 A.
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