Abstract
The main principle behind the new super barrier rectifier (SBR) approach is to create the ldquosuperrdquo barrier for majority carriers without unreliable metal-semiconductor Schottky contact. The SBR technology creates such barrier in the MOS channel. The height of this barrier can be easily adjusted by the doping concentration in the channel. This paper demonstrates that the new power diodes combine high performance and high reliability for low voltage applications (below 100 V). The underlying concepts and analysis of operation are presented as well as the laboratory test results that compare performance and reliability between Schottky and the new SBR diode.
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