Abstract
The production of single crystal diamond thin films of large area would be a technological breakthrough for a variety of electronic and optical applications. In terms of the objectives of this contract, single crystal films would produce high quality doped regions and thus better barriers for energy conversion in the vacuum ultraviolet. To date, diamond single crystal films have been made homo-epitaxially on natural or synthetic diamond single crystals. As large single crystal diamond is prohibitively expensive, there is a need to find matching substrates for diamond heteropolarities. Cubic boron nitride has the diamond lattice structure and matches nearly perfectly the cell dimensions. However, large area cubic BN single crystal substrates are not available, as c-BN is stable, just like diamond, at high pressures and high temperatures only. The widely used Si substrates have a large lattice constant mismatch with diamond.
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