Abstract
As the core device of energy conversion and transmission, IGBT (Insulated Gate Bipolar Transistor) has received the most attention. It is an effective way to improve the reliability of the IGBT modules by analyzing the failure mechanism of the IGBTs and establishing the lifetime model of the IGBTs throughs accelerated aging experiments. This paper will analyze and summarize the failure mechanism of IGBTs, accelerated aging test method and IGBT module life models. A reasonable scheme for accelerated aging test is proposed to obtain the IGBT life model. Several common life models were analyzed.
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