Abstract

The summary and conclusions of the whole work and its future application was discussed in this chapter. In summary, we have started this monograph with a study of different structural and optical properties of multilayer QD structures capping with combination of quaternary In0.21Al0.21Ga0.58As capping and a high-temperature grown GaAs layer, we also described the effect of strain on multilayer heterostructures and formation of QDs. We also pointed out the effect of rapid thermal annealing on structural and optical properties of both single and multilayer QD structures. One of the key results we have observed is the stability of PL peak of multilayer structure even after high temperature annealing. Then we have moved from materials to devices. We have used both InAs/GaAs and In(Ga)As/GaAs QD in the active layer of the multilayer heterostuctures. Improvement in device characteristics was also observed for the samples with ex-situ annealing.

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