Abstract
AbstractPolycrystalline CuInS2 (CIS) films are prepared by sulfurization of CuIn metallic precursors with Cu/In = 1.2 on Mo substrates. Variation of the rapid thermal processing (RTP) parameters adjusted to the low copper surplus yielded near stoichiometric CIS films with considerably less CuSx precipitation at the surface. A start temperature and low temperature slopes were introduced to guarantee crystal quality and large grain size. XPS/UPS, X‐ray diffraction measurement, and scanning electron microscopy data show the distinct properties of the chalcopyrite phase and its morphological structure in comparison to the standard sulfurization process. A considerable improvement has been achieved by variation of the temperature profiles. The proposed process modules obtain near stoichiometric CIS films for industrial solar cell production.
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