Abstract
Cu(Ag) films are a promising interconnect material due to their low electrical resistivity and due to an expected increase of the electromigration resistance by alloying effects compared to pure copper films. Besides the alloying element also impurities are incorporated into the film during the electrochemical deposition process, which can retard or enhance electromigration damage. An impurity element of special interest is sulfur, which could probably improve the interconnect reliability besides the alloying element silver. In this paper, the incorporation, the distribution and the chemical state of sulfur in Cu(Ag) films is discussed in dependence on the thermal history. The investigations were mainly carried out by XPS and GD-OES measurements.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
