Abstract

The rapid switching action of power metal-oxide-semiconductor field-effect transistor (MOSFET) causes high-level electromagnetic interference (EMI) in power converters. The switching transient waveform modification method realized by closed-loop gate drive has been recognized as an effective high-frequency EMI reduction approach. However, feedback control of power MOSFET in the saturation region would introduce stability problems. This paper presents a sufficient condition-based stability analysis of all the operating points during turn-off using Kharitonov’s theorem. Firstly, a small-signal MOSFET model during turn-off was used to derive the closed-loop system transfer function. The nonlinear capacitances and the rest constant parameters of the small-signal model were determined based on the device characteristics and the expected outcome of the drain-source voltage. Then we split the turn-off switching transient into several subintervals, during which the system characteristic equation became an interval polynomial due to the nonlinear capacitances. Finally, Kharitonov’s theorem was applied in each subinterval to evaluate the stability, thereby achieving the overall system stability analysis during turn-off. Experiments were conducted to investigate the system’s stability and the results confirmed the validity of the proposed analysis. This work presents an implementable design guideline for the applied switching transient waveform modification of power converters via closed-loop gate drive.

Highlights

  • The high switching speeds of power metal-oxide-semiconductor field-effect transistor (MOSFET)result in serious interference in power converters

  • Interference suppression can be achieved by applying electromagnetic interference (EMI) filters at a cost of additional space for installation [1,2,3]

  • Feedback control of switching devices in the saturation region is employed to modify the switching transient waveform according to a Gaussian S-shaped reference for electromagnetic interference suppression [7,8]

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Summary

Introduction

The high switching speeds of power metal-oxide-semiconductor field-effect transistor (MOSFET). Result in serious interference in power converters. Interference suppression can be achieved by applying electromagnetic interference (EMI) filters at a cost of additional space for installation [1,2,3]. The closed-loop gate drive method has been successfully applied to regulate the switching trajectory of insulated-gate bipolar transistor (IGBT)/MOSFETs in power converters [4,5,6,7]. Feedback control of switching devices in the saturation region is employed to modify the switching transient waveform according to a Gaussian S-shaped reference for electromagnetic interference suppression [7,8]. The effect of reduced EMI generation is remarkable. The stability issues introduced by the feedback control should be seriously considered in circuit design

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