Abstract
In this work, the M/MoS2 and M/BN/MoS2 (M = Ag or Mo) nanolaminate films were prepared by RF magnetron sputtering via successive layer-by-layer deposition at room temperature, followed by annealing at 500 °C. And then, the BN/MoS2 heterostructure with clean and tight interface were successfully prepared on different metal electrode layers. The results show that the first deposited metal (Mo or Ag) layer strongly influences the morphology of the top MoS2 layer, while inserting a BN layer promotes its influence. The results of electric property test indicate the resistivity of the Mo/BN/MoS2 film at the linear part of E–J curve is higher than that of Ag/BN/MoS2 film but the Mo/MoS2 film is lower than the Ag/MoS2 film in total resistivity, confirming Mo is more suitable than Ag as the electrode material for the MoS2-BN based two-dimensional (2D) electronic devices. This work supplies a simple way for the low-temperature continuous fabrication of 2D MoS2-BN-based integrated devices.
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