Successive ionic layer deposition (SILD) as a new sensor technology: synthesis and modification of metal oxides**This article was presented at the 13th International Conference on Sensors and Their Applications, held in Chatham, Kent, on 6–7 September 2005.

Abstract

In this paper, we have discussed both peculiarities and advantages of successive ionic layer deposition (SILD) methods for the synthesis and modification of metal oxides. For these purposes, the results of research into the design of SILD technology suitable for preparing porous nanostructure SnO2 films and the surface modification of SnO2 films deposited by spray pyrolysis have been analysed. It has been shown that this new method can be used for the deposition of metal oxides and for noble metals. A great deal of interest in the SILD method may be generated by the method's simplicity, cheapness, and ability to deposit thin nanostructure films on rough surfaces. The SILD method essentially consists of successive treatments of both conductive and dielectric substrates by solutions of various salts, which form poorly soluble compounds at the substrate surface. It has been found that SILD technology is an effective method for improving gas sensor parameters. For example, it has been established that surface modification by Pd and Ag using SILD technology improves the gas response of SnO2-based sensors to reducing gases, and depresses their sensitivity to oxidizing gases.