Abstract

Thin ZnSe layers were deposited on ZnO nanowires by a novel successive ionic layer adsorption and reaction technique in order to solve recombination problems in ZnO nanowire-based dye-sensitized solar cells (DSSCs). Cell efficiency increased from 0.1 to 1.3–1.4% with the deposition of a 9- to13-nm-thick ZnSe shell on ZnO nanowires due to a large increase in JSC. The dramatic increase in JSC and cell efficiency is due to the facilitation of electron transfer related to ambipolar diffusion by the formation of a type II band alignment and the suppression of recombination in the presence of the ZnSe shell.

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