Abstract
Successive ionic layer adsorption and reaction (SILAR) deposition of CdS which is based on sequential reactions at the substrate surface is report in this work. Each reaction is followed by rinsing which enables heterogeneous reaction between the solid phase and the solvated ions in the solution. Accordingly, a thin film can be grown layer-by-layer and the thickness of the film is determined by counting the deposition cycles. Metal chalcogenide thin films prepared by SILAR method are of particular interest, as in recent years improvements in the technique has developed enormously due to the fact that one dimension of such films is relatively easy to produce monolayer by monolayer. A cationic solution of 0.005M CdSO and an anionic 4 solution of 0.005m Na S was used for the deposition. Thin film had a thickness of 81nm and an 2 optical transmittance of 65%. Thin film had a bandgap of 2.65eV and a resistivity of 1.5 x 6 10 Wcm.
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