Abstract
The subthreshold transport properties in exfoliated MoS2 FETs are reported. The temperature dependence of subthreshold characteristics in multilayered MoS2 FETs behaves in the same way as that of conventional semiconductors, while conductance fluctuations and random telegraphic signals in the subthreshold region of Ids–Vgs characteristics were observed much more frequently in monolayered FETs than in multilayered ones. This fact is understandable from the viewpoint of a three-dimensional to two-dimensional percolation transport process in MoS2 with defects, which should be located in the MoS2 layer or at the MoS2/SiO2 interface. Thus, it is suggested that few-layered MoS2 FETs are more viable for practical applications from the viewpoint of suppressing defect-induced current fluctuations.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
