Abstract
The subthreshold swing of asymmetric double gate(DG) MOSFET has been analyzed for top and bottom gate oxide thickness. The asymmetric DGMOSFET has the advantages to be able to fabricate differently thickness of top and bottom gate oxide. The analytical subthreshold swing model has been derived from analytical potential model for asymmetric DGMOSFET. The subthreshold swing for asymmetric DGMOSFET has been investigated using our analytical subthreshold swing model for the change of top and bottom gate thickness. As a result, we know the subthreshold swings have greatly changed for top and bottom gate thickness, and those have been especially influenced on top gate thickness.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
