Subthreshold leakage power reduction by Feedback Sleeper-Stack technique

Abstract

As per the International Technology Roadmap for Semiconductors (ITRS) the leakage power is growing exponentially and is the major part of total power consumption in the integrated device. With the growing impact of subthreshold and gate leakage, static leakage contributes more and more towards the power dissipation in deep submicron nano CMOS technology. To overcome this problem several techniques has been proposed. In this paper we analyses the subthreshold leakage minimization techniques in circuit level. We propose a circuit technique named “Feedback Sleeper-Stack (FS-S)” for efficient leakage reduction in digital circuits. The proposed technique is compared with available leakage reduction techniques for subthreshold power, total power, delay and PDP (Power Delay Product). Of the available techniques, three power gating techniques are considered for comparison namely, Sleeper, Forced Stacking (FS) and Sleepy Stack (SS). Nominal supply voltage of 0.9V is selected and 32nm BSIM4 Predictive Technology Models (PTM) is employed in the analysis. ELDO Mentor Graphics tool is used for net list simulation.