Abstract
The subthreshold conduction in dual-gate MOS transistors is investigated. The subthreshold current is calculated both in the long-channel case and the short-channel case by means of simple models. Good agreement is found between theory and experimental results obtained through measurements on overlapping-gate n-channel devices. As an application of the subthreshold current analysis, the low-frequency transfer inefficiency in bucket-brigade devices (BBD's) is evaluated. The theoretical result agrees well with measurements carried out on p-channel nonoverlapping-gate devices.
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