Abstract
The potential variation in the channel obtained from analytical solution of three-dimensional (3-D) Poisson's equation is used to calculate the subthreshold current and threshold voltage of fin field-effect transistors with doped and undoped channels. The accuracy of the model has been verified by the data from 3-D numerical device simulator. The variation of subthreshold slope and threshold voltage with device geometry and doping concentration in the channel has been studied.
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